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94
Dec 30, 2020
12/20
by
Allen, P. E. (Phillip E.)
texts
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xiii, 701 pages : 24 cm
Topics: Linear integrated circuits, Metal oxide semiconductors, Complementary, LINEAR INTEGRATED CIRCUITS,...
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40
Oct 26, 2020
10/20
by
Annaratone, Marco
texts
eye 40
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xv, 344 pages : 25 cm
Topics: Metal oxide semiconductors, Complementary, Digital electronics, Integrated circuits -- Very large...
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95
Jul 3, 2020
07/20
by
Bird, B. M
texts
eye 95
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xvi, 287 pages : 24 cm
Topics: Power electronics, Power semiconductor devices
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261
Jun 21, 2010
06/10
by
Blumenthal, M.; Checinski, T
texts
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Kinetics of thermal dissociation of silver nitrite in vacuum and atmospheric conditions
Topics: PIONEER SPACE PROBES, SYSTEMS ENGINEERING, SILICON COMPOUNDS, SOLAR CELLS, SOLAR PROBES, FLYBY...
216
216
May 31, 2011
05/11
by
Bolonkin, Alexande
texts
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At present, rockets are used to change the trajectory of space ships and probes. This method is very expensive and requires a lot of fuel, which limits the feasibility of space stations, interplanetary space ships, and probes. Sometimes space probes use the gravity field of a planet. However, there are only 9 planets in our solar system and they are separated by great distances. There are tens of millions of asteroids in outer space. The author offers a revolutionary method for changing the...
Topics: AEROSPACE ENVIRONMENTS, DIELECTRICS, INTEGRATED CIRCUITS, OPERATIONAL AMPLIFIERS, SEMICONDUCTOR...
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15
May 12, 2021
05/21
by
Boolchand, P. (Punit)
texts
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1 online resource (xi, 822 pages) :
Topics: Glass, SCIENCE -- Physics -- Condensed Matter, GLASS, THIN FILMS, SEMICONDUCTOR DEVICES,...
458
458
Jul 23, 2010
07/10
by
Campanella, S. Joseph; Sayegh, Sohei
texts
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An investigation performed for NASA LeRC by COMSAT Labs, of a digitally implemented on-board demultiplexer/demodulator able to process a mix of uplink carriers of differing bandwidths and center frequencies and programmable in orbit to accommodate variations in traffic flow is reported. The processor accepts high speed samples of the signal carried in a wideband satellite transponder channel, processes these as a composite to determine the signal spectrum, filters the result into individual...
Topics: ELECTRON MICROSCOPY, PATTERN RECOGNITION, IMAGE PROCESSING, NONDESTRUCTIVE TESTS, SEMICONDUCTOR...
364
364
May 23, 2011
05/11
by
Carlson, John R
texts
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The ability of the three-dimensional Navier-Stokes method, PAB3D, to simulate the effect of Reynolds number variation using non-linear explicit algebraic Reynolds stress turbulence modeling was assessed. Subsonic flat plate boundary-layer flow parameters such as normalized velocity distributions, local and average skin friction, and shape factor were compared with DNS calculations and classical theory at various local Reynolds numbers up to 180 million. Additionally, surface pressure...
Topics: GALLIUM ARSENIDES, QUANTUM NUMBERS, SILICON, HOLES (ELECTRON DEFICIENCIES), IONIZATION, MONTE CARLO...
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57
Jul 25, 2020
07/20
by
Carroll, John E
texts
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xiv, 253 pages 24 cm
Topics: Semiconductors, Semiconducteurs, Halbleiterbauelement, Konstruktion, Semiconductor devices
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238
May 21, 2011
05/11
by
Cech, Steven D
texts
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All required work associated with the above referenced contract has been successfully completed at this time. The Modis-N Airborne Simulator has been developed from existing AB184 Wildfire spectrometer parts as well as new detector arrays, optical components, and associated mechanical and electrical hardware. The various instrument components have been integrated into an operational system which has undergone extensive laboratory calibration and testing. The instrument has been delivered to...
Topics: BETA PARTICLES, RADIOACTIVE ISOTOPES, RADIOISOTOPE BATTERIES, ENERGY CONVERSION, ENERGY CONVERSION...
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140
Jul 26, 2010
07/10
by
Choi, Sung R.; Salem, Jonathan A
texts
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The dynamic fatigue behavior of 30 vol percent silicon nitride whisker-reinforced composite and monolithic silicon nitrides were determined as a function of temperature from 1100 to 1300 C in ambient air. The fatigue susceptibility parameter, n, decreased from 88.1 to 20.1 for the composite material, and from 50.8 to 40.4 for the monolithic, with increasing temperature from 1100 to 1300 C. A transition in the dynamic fatigue curve occurred for the composite material at a low stressing rate of 2...
Topics: CARRIER DENSITY (SOLID STATE), SEMICONDUCTORS (MATERIALS), TEMPERATURE EFFECTS, OPERATING...
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17
Sep 30, 2020
09/20
by
Cohen, Marvin M
texts
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ix, 299 pages 24 cm
Topics: Quantum electronics, Semiconductors, 33.71 electron states, Halbleiter, Quantentheorie,...
394
394
May 29, 2011
05/11
by
Content, David; Sroda, Tom; Palmer, Christopher; Kuznetsov, Iva
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The program we are attempting to bring about combines 3 difficult features, in order to demonstrate accuracy of efficiency predictions: (1) Accurate groove metrology methods on surface relief gratings; (2) Rigorous and usable electromagnetic efficiency calculation codes; (3) Accurate efficiency measurements in polarized light The benefit would be an increase in yield for high-performance gratings. Many such applications suffer long lead time or serious performance loss when new gratings are...
Topics: PERFORMANCE TESTS, DIODES, METALLIZING, ADHESION TESTS, ANNEALING, HEAT TREATMENT, SUBSTRATES,...
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18
Nov 5, 2021
11/21
by
Cooke, M. J
texts
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ix, 353 pages : 25 cm
Topics: Semiconductors, Semiconductores, Halfgeleiders, 11030 semiconductor devices
172
172
Mar 6, 2018
03/18
by
Deboo, Gordon J; Burrous, Clifford N., author
texts
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Includes bibliographical references and index
Topics: Semiconductors, Integrated circuits, Optoelectronic devices, Semiconducteurs, Circuits...
The Army Research Laboratory (ARL), in collaboration with the Air Force Phillips Laboratory, has been developing the fabrication process for lateral topology, highpower photoconductive semiconductor switches (PCSS) used in phased-array, ultra-wideband (UWB) sources. This work presents issues associated with the development of these switches. First-generation devices (1.0 cm gap spacing) have been shown to achieve sub-nanosecond risetimes, working hold-off voltages of 50 kV, switched currents of...
Topics: DTIC Archive, ARMY RESEARCH LAB FORT MONMOUTH NJ, *HIGH POWER, *PHOTOCONDUCTIVITY, *SEMICONDUCTOR...
The major topics of this conference were generally the same as those emphasised at the two previous conferences (Stuttgart, 1974, and Warsaw, (1972). The following subjects which were of particular interest at this meeting are reviewed: surfaces and interfaces, excitons and exciton condensation, disordered semiconductors, and future semiconductor devices. In addition, selected presentations concerned with impurities, lattice dynamics, band structure, and one- and two-dimensional systems are...
Topics: DTIC Archive, Taylor,P Craig, OFFICE OF NAVAL RESEARCH LONDON (ENGLAND), *SEMICONDUCTORS, SYMPOSIA,...
The reference coordinate description of the general nonlinear differential equations describing the interaction of finitely deformable, polarizable, intrinsic n-type semiconductors with the quasi-statie electric field is applied in the study of acceleration waves in piezoelectric semiconductors. As a consequence, the mechanical and dielectric nonlinearities are included in the treatment as well as the semiconduction nonlinearity. The general equation for the propagation velocity of the...
Topics: DTIC Archive, McCarthy,M F, RENSSELAER POLYTECHNIC INST TROY N Y DEPT OF MECHANICAL ENGINEERING...
This report details the phenomenology of Second Breakdown in semiconductor materials. This phenomenology is then investigated and explained in the light of solid state physics and known experimental results. The similarity between Second Breakdown and current controlled negative resistance is shown to lead to the conclusion that current and thermal mode breakdown is explained by plasma injection. (Author)
Topics: DTIC Archive, Snyder,M E, AIR FORCE WEAPONS LAB KIRTLAND AFB NM, *Solid state electronics,...
For all the difficulties engendered in its use, semiconductor device damage data are an integral part of many programs of electromagnetic pulse vulnerability assessment and hardening. Experimental damage data, which are generated only as a result of dedicated efforts, can be expected to be available for only a minor fraction of all semiconductor devices. This limited supply has spurred efforts to develop predictive damage models, in order to bypass the tedious experimental requirements for...
Topics: DTIC Archive, Vrabel, Michael J, HARRY DIAMOND LABS ADELPHI MD, *DIODES, *BIPOLAR TRANSISTORS, TEST...
Evaporated tungsten interface dopant, oxide-nitride interface and nitride bulk traps in MNOS structures were examined using charge centroid and thermally stimulated current (TSC) techniques. Trapping in dopant traps occurred at low injected charge levels. Above a 'saturation' level trapping occurred in the nitride, and the charge centroid penetrated into the nitride. TSC measurements were made on MNS, MNOS, and interface doped MNOS devices. Analysis of TSC spectra yielded trap depths for the...
Topics: DTIC Archive, Sutton, William Gardner, AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF...
The papers enclosed with this report include: a new method for studying hot electron energy distributions in SiO2, plasma enhanced chemical vapor deposition of Si-rich SiO2, the use of Si-rich SiO2 to greatly reduce electron trapping effects, the use of Si-rich SiO2 to increase the yield of thin film capacitors, ellipsometry measurements of polycrystalline silicon films and the use of a delay time technique to measure the diffusion of the oxidant in SIO2 films.
Topics: DTIC Archive, Young, D R, IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY, *SEMICONDUCTING...
Partial contents: Small Firms--Growth and Jobs?; High Polymers as Thin Films; Robotics at ASEA; Software Systems Research at Linkping Institute of Technology; and European Microwave Semiconductor Devices Conference.
Topics: DTIC Archive, Armstrong,Ronald W, OFFICE OF NAVAL RESEARCH LONDON (ENGLAND), *FOREIGN TECHNOLOGY,...
This report describes in detail the use of the Cameca IMS-300 ion microscope for both quantitative analysis of sophisticated electronic devices and qualitative evaluation of ion implanted metals. The use of Secondary Ion Mass Spectroscopy (SIMS) in depth profiling adds a new dimension to surface analysis, enabling small concentrations of species which were previously undetectable to be determined. By being able to distinguish the differences in mass, isotopic techniques permit the elucidation...
Topics: DTIC Archive, GEO-CENTERS INC NEWTON UPPER FALLS MA, *Semiconductor devices, *Surface analysis,...
The shift in V(fb) of several single crystal semiconductors (p-Si, p-GaAs, n-TiO2, n-Cds, n-MoSe2, n- and p-WSe2) was investigated in MeCN containing a number of redox couples. While V(fb) shifts with V(redox) for p-Si, p-GaAs, n-TiO2 and n-Cds for the layered compounds (n-MoSe2, n- and p-WSe2) was essentially independent of V(redox). (Author)
Topics: DTIC Archive, Nagasubramanian,G, TEXAS UNIV AT AUSTIN DEPT OF CHEMISTRY, *SEMICONDUCTORS, *FERMI...
This research program investigates the effect of extreme submicron spatial modulation of the electrostatic potential on the transport of electrons in silicon and in III-V compound semiconductor devices. The test vehicle is the so called grating gate FET (GGFET). When made to move in a direction perpendicular to the potential modulation, i.e., perpendicular to the grating gate, electrons experience a surface superlattice (SSL) effect. When moving along the potential modulation electrons are...
Topics: DTIC Archive, Antoniadis,Dimitri A, MASSACHUSETTS INST OF TECH CAMBRIDGE, *FIELD EFFECT...
Contents: Physical Electronics; Computer and Information Systems; and Communication and Control Systems.
Topics: DTIC Archive, Chien,R T, ILLINOIS UNIV AT URBANA-CHAMPAIGN COORDINATED SCIENCE LAB, *ELECTRONICS,...
The results of further life-testing of rectangular and curved multipliers is discussed. The commencement of the Confirmatory Sample phase is described including improvements in the manufacturing methods. (Author)
Topics: DTIC Archive, Gordon,B Grant, CANADIAN COMMERCIAL CORP OTTAWA (ONTARIO), *POWER SUPPLIES, *NIGHT...
Topics: DTIC Archive, OFFICE OF NAVAL RESEARCH ARLINGTON VA, *SEMICONDUCTOR DEVICES, *MICROELECTRONICS,...
A series of experimental studies was conducted on transistor elements suitable for microcircuits. A relationship of transient radiation effects to active volume and other parameters was made. The experimental and theoretical method developed offers a way of obtaining minority carrier lifetimes, depletion layer width, junction area, diffusion length, and active volume when the absorbed dose and the ionization efficiency are known in the transistor element of a microcircuit. Conversely, given the...
Topics: DTIC Archive, NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH, *DAMAGE, *ELECTRONIC...
The objective of this program is to improve the knowledge and state of the art concerning compound semiconducting materials with particular emphasis on their use in practical devices. The program consists of three principal sections: epitaxial crystal growth; device application; and fundamental materials studies. The epitaxial crystal growth section concerns the preparation of material suitable for the device applications. The major emphasis in device application is on microwave and acoustical...
Topics: DTIC Archive, Stevenson, D A, STANFORD UNIV CA CENTER FOR MATERIALS RESEARCH, *EPITAXIAL GROWTH,...
Through the use of numerical methods involving both the drift and diffusion equations including traps, and more recently the quantum Liouville equation, Scientific Research Associates, Inc., (SRA) has been examining the physics and operation of LTG materials and devices. Both defect and Schottky models have been studied, and two-dimensional microscopic and macroscopic device simulations have been performed. A new generalization of the drift and diffusion equations, including current, has been...
Topics: DTIC Archive, Grubin, Harold L, SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT, *BUFFERS, *LOW...
Terahertz quantum cascade laser sources based on intra-cavity frequency mixing are currently the only monolithic electrically pumped semiconductor devices that can operate in the 16 THz spectral range at room temperature. The introduction of the Cherenkov waveguide scheme in these devices grown on semi-insulating InP substrates enabled generation of tens of microwatts of average terahertz power output and wide spectral tunability. However, terahertz radiation outcoupling in these sources is...
Topics: DTIC Archive, Jung,Seungyong, University of Texas at Austin Austin United States, terahertz...
During this program the design for a series-connected EBS device was completed and six of these devices were fabricated, burned-in, and delivered. Each device consisted of three basic sub-assemblies; the electron gun, the beam deflection and rotation structure, and the target. The electron gun and beam deflection and rotation structure utilized designs previously developed at Watkins-Johnson Company. The target was modified from previous EBS designs to incorporate a target consisting of two...
Topics: DTIC Archive, Bell,B W, WATKINS-JOHNSON CO PALO ALTO CALIF, *SEMICONDUCTOR DEVICES, *ELECTRON...
The overall objective of this experimental program is to control the light emission properties and energy transfer mechanisms in nanoscale semiconductor structures in order to realize new or improved photonic devices. For nanostructures that are defined by buried heterojunction interfaces the focus is to define the regimes in which scattering and carrier collection dominate the performance of quantum well and superlattice devices. For nanostructures with exposed surfaces the focus is to...
Topics: DTIC Archive, Kolbas, Robert M., NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF ELECTRICAL AND...
Russian ultra-fast, solid state switch technology was investigated in this study. Drift step recovery diodes (DSRDs) with silicon avalanche shapers (SASs) were experimentally examined. In addition, the SAS was studied using device-level modeling. The experiments and model results were compared with each other and with the Russian theory of operation. This research demonstrated that the Russian theory of the SAS was inconsistent with the operational behavior and circuit simulation. The SAS...
Topics: DTIC Archive, Schamiloglu, E., NEW MEXICO UNIV ALBUQUERQUE DEPT OF ELECTRICAL ENGINEERING AND...
Contents: Solid State Device Research, Quantum Electronics, Materials Research, Microelectronics, Analog Device Technology. Keywords: Solid state devices, Quantum electronics, Materials research, Microelectronics, Ion implantation, Analog device technology, Optical modulators, Lasers, Quantum well effects, Nonlinear optics, Charge coupled devices, Microwave semiconductor devices, Superconductors; and Neural networks.
Topics: DTIC Archive, McWhorter, Alan L, MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB, *SOLID STATE...
Individual semiconductor devices can not output the power required for many future millimeter-wave systems. During this three year contract we have investigated an innovative way of coherently combining the outputs of a large number of semiconductor devices as a means of generating high power millimeter- wave signals. The combiner consists of a 2-D array of free running oscillators integrated into radiating antennas. Inter-element coupling in the array acts to lock all the elements together...
Topics: DTIC Archive, Compton, Richard C, CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING, *ARRAYS,...
It has been shown that noise which is in excess of the semiconductor device noise can be identified with the electrochemical processes taking place in ISFETs. The frequency analysis of this noise yields information about interfacial capacitance and exchange current density at the membrane/solution interface. These parameters have been evaluated for several ion-selective membranes.
Topics: DTIC Archive, Haemmerli,Andre M, UTAH UNIV SALT LAKE CITY DEPT OF BIOENGINEERING, *Field effect...
The objective of this study was to update and revise the failure rate prediction models for discrete semiconductor devices currently in Section 5.1.3 of Mil-Hdbk-217e, Reliability Prediction of Electronic Equipment. GaAs Power FETS, Transient Suppressor Diodes, Infrared LEDs, Diode Array Displays and Current Regulator Devices. The proposed prediction models provide the ability to predict total device failure rate (both catastrophic and drift) for all military environments for both operating and...
Topics: DTIC Archive, Colt, David W, IIT RESEARCH INST ROME NY, *DIODES, *GALLIUM ARSENIDES, *ARRAYS,...
Standard silicon wafers are shown to frequently contain residual mechanical saw damage in the surface. The damage is identified through transmission electron microscopy (TEM) as microsplits of the silicon lattice. Microsplits are not detectable by standard inspection, screening or etching techniques. Microsplit dimensions range from 0.1 to 10 micrometer. The density of the splits can vary from zero to 10 to the 6th power/sq cm or even higher. Microsplits are shown to cause loss of storage time...
Topics: DTIC Archive, Schwuttke, Guenter H, IBM CORP HOPEWELL JUNCTION NY EAST FISHKILL LABS, *CAPACITORS,...
A Wright Laboratory Manufacturing Technology Directorate-sponsored project has developed new instrumentation for in-line wafer-state diagnostics and process control for semiconductor fabrication which could result in significant savings when fully implemented. The significance of this achievement was recognized by R&D Magazine, when the instrument received the 1996 'R&D 100' award, for being one of the 100 most technologically significant new products developed over the year. This award...
Topics: DTIC Archive, WRIGHT LAB WRIGHT-PATTERSON AFB OH MANTECH TECHNOLOGY TRANSFER CENTER, *INDUSTRIES,...
We have demonstrated a very unique application of LTG-GaAs for nanometer scale ohmic contacts to GaAs. We coat an LTG-GaAs layer with a self-assembled monolayer of xylyl diol, which serves as a metal/semiconductor interface layer. The xylyl diol molecules are 1.8 nm long and have a thiol group at each end to provide chemical bonding to the GaAs and to the gold clusters. The IV data of the contact shows good ohmic behavior with repeatability between various clusters distributed across the...
Topics: DTIC Archive, Melloch, Michael R, PURDUE RESEARCH FOUNDATION LAFAYETTE IN, *SEMICONDUCTOR DEVICES,...
The goal of this project is to develop a 3-5 micrometer continuously tunable single-frequency laser source. Our approach uses an external cavity (EC) and various tuning elements in conjunction with a semiconductor optical amplifier (SOA). Optically pumped, amorphous-silicon ridge-waveguide lasers, grown via molecular-beam epitaxy, were developed that could function as curved-ridge-waveguide SOAs. The lasers operate at a temperature of 295 K, where they output 7 mW per facet. The wavelength is 3...
Topics: DTIC Archive, Martinelli, Ramon U, SARNOFF CORP PRINCETON NJ, *TUNABLE LASERS, *INFRARED LASERS,...
Samples were fabricated by the same processes as the previous ones, but with triangular e-beam pads. Validity of the test structure was first examined. After stressing groups of 40 nm and 50 nm wide lines, samples were checked in the FESEM. In the tested samples, most of the lines failed inside the lines and their pads were intact, and a small portion failed in the pads, as shown in Figure 10. The test results show that the new structure can withstand the high current density and survive the...
Topics: DTIC Archive, Bernstein, Gary, NOTRE DAME UNIV IN, *ELECTRON SCATTERING, *INTEGRATED CIRCUITS,...
This report results from a contract tasking University College London as follows: The contractor shall develop a material simulation model and code. This model will be applied to study the geometric and electronic structure, stability and properties of defects in SiO2 dielectrics in semiconductor devices. Specifically, the contractor will deliver: 1. A robust set of force-field. embedding potential (pseudo potential), basis set, shell model that will: (a) Reproduce faithfully the lattice...
Topics: DTIC Archive, Sushko, Peter V, UNIVERSITY COLL LONDON (UNITED KINGDOM) DEPT OF PHYSICS AND...
A theoretical study of the electronic structure of selected transition metal impurities in silicon carbide is carried out using a first-principles approach. Polytype dependence, site preference and charge and spin states are investigated.
Topics: DTIC Archive, Lambrecht, Walter R, CASE WESTERN RESERVE UNIV CLEVELAND OHDEPT OF PHYSICS,...
This report describes research on eight different projects ranging from fundamental quantum optics to optical engineering. Topics discussed include the following: Study of magnetoexciton femtosecond spectroscopy, semiconductor microcavities, and periodic structures, ion trapping and quantum transport in optical lattices, quantum atom optics, design optimization of circular grating DBR lasers, coherent and incoherent ultrafast nonlinear optical processes in anisotropically strained semiconductor...
Topics: DTIC Archive, Wyant, James C, ARIZONA UNIV TUCSON OPTICAL SCIENCES CENTER, *OPTICS, *QUANTUM...
This document describes the development of the Hydrodynamic Power Semiconductor Device Simulator (HPSDS), which solves the quantum mechanical hydrodynamic balance equations for the electrons and holes along with the Poisson equation, for a LW dimensional device. The program will compute the electrostatic potential, electron and hole densities, recombination rate, electron and hole velocities, current densities, electron and hole temperatures, and other quantities of interest as functions of...
Topics: DTIC Archive, Cui, Hong-Liang, STEVENS INST OF TECH HOBOKEN NJ DEPT OF PHYSICS AND ENGINEERING...
Topics: DTIC Archive, Kavokin, Alexey, CLERMONT-FERRAND-2 UNIV AUBIERE (FRANCE), *LIGHT, *NITRIDES, OPTICAL...
