Since the mid-20th Century the electronics industry has enjoyed phenomenal growth and is now the largest industry in the world. The foundation of the electronics industry is the semiconductor device. To meet the tremendous demand of this industry, the semiconductor-device field has also grown rapidly. Coincident with this growth, the semiconductor-device literature has expanded and diversified. For access to this massive amount of information, there is a need for a book giving a comprehensive...
Topic: Physics of Semiconductor Devices
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May 27, 2021
05/21
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N. Izyumov; D, Linde
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These days radio _engineering has become a very important branch of science solving a large number of problems associated with economic, technological and cultural progress. Every year, it finds ever increasing application and the number of people using radio equipment constantly grows. Many of these people have only rudimentary or no knowledge of radio engineering, although modern radio equipment is often so complicated that its effective use is impossible without some· training. The wide...
Topics: engineering, electronics, radio, communication, ac circuits, coupled circuits, electrical filters,...
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Jan 24, 2021
01/21
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Heathkit Educational Systems
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Textbook for the Heathkit EE-3104-B Electronic Circuits individual learning course. This course allows students to scrutinize the fascinating world of electronic circuits and take a detailed look at circuit applications to every-day appliances. Students will see electronics in their home in a whole new light after taking this course. Students will analyze and design inverting and noninverting amplifiers, build transistor and integrated circuit amplifiers, oscillators, active filters and a...
Topics: Heathkit, Course, Semiconductor Devices
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Electronics and Electrical Students will find these books useful
Topics: Electronics, Electrical, Semiconductor devices, Matrix Algebra, Linear Algebra, Electromagnetics,...
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Jan 31, 2022
01/22
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Mohan, Ned
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xvii, 802 pages : 26 cm +
Topics: Power electronics, Electric current converters, Power semiconductors, Électronique de puissance,...
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Dec 30, 2020
12/20
by
Allen, P. E. (Phillip E.)
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xiii, 701 pages : 24 cm
Topics: Linear integrated circuits, Metal oxide semiconductors, Complementary, LINEAR INTEGRATED CIRCUITS,...
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Jan 24, 2021
01/21
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Heathkit Educational Systems
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Textbook for the Heathkit Semiconductor Devices individual learning course. Students explore the world of semiconductors— diodes, bipolar transistors, FETS, thyristors and UJTs, Zeners and many more. Students learn how semiconductor devices are constructed, how to handle them, how various devices operate, and how to use them in practical circuits.
Topics: Heathkit, Course, Semiconductor Devices
The electronic component industry leads the world in the achievement of quality and reliability, whilst at the same time providing products and functionality at steadily reducing prices.
Topics: DTIC Archive, Brydon, G M, QA REL ASSOCIATES NORTHHAMPTON (UNITED KINGDOM),...
The objectives of the Transient Radiation Effects on Electronics (TREE) Handbook are to (1) provide information about radiation effects on semiconductor devices and materials, (2) provide guidelines for microelectronic radiation hardening technology, and (3) serve as a reference for radiation hardness assurance and microelectronic radiation testing. The radiation environments addressed in this handbook include those produced by nuclear weapons effects (NWE) and natural space. The NWE...
Topics: DTIC Archive, Cohn, Lewis, KAMAN SCIENCES CORP ALEXANDRIA VA ENGINEERING SCIENCES DIV, *NUCLEAR...
The 1999 Integrated Photonics Research Conference was one of the most important international conferences specializing in the science and technology of photonics. It provided an annual forum for the dissemination of new results involving all experimental and theoretical aspects of integrated photonic components. These included the design, simulation, fabrication, materials, characterization, packaging, and application of photonic devices as well as specific, timely and emerging topics which are...
Topics: DTIC Archive, Thorner, John A, OPTICAL SOCIETY OF AMERICA WASHINGTON DC, *SYMPOSIA, *OPTICAL...
Radiation design criteria for electronic parts applications in space environments are provided. The data were compiled from the Mariner/Jupiter Saturn 1977 electronic parts radiation test program. Radiation sensitive device types were exposed to radiation environments compatible with the MJS'77 requirements under suitable bias conditions. A total of 189 integrated circuits, transistors, and other semiconductor device types were tested.
Topics: NASA Technical Reports Server (NTRS), CIRCUITS, DESIGN ANALYSIS, ELECTRICAL ENGINEERING,...
Various types of thermoelectric devices are considered and their qualitative reliability indices are presented. The area of applicability of the exponential law of the probability density distribution of rejections is described for computations on the devices mentioned. On the basis of an analysis of the quantitative reliability indices, and the design and technological features of the devices, a series of recommendations are given with respect to an increase of the reliability and quality of...
Topics: DTIC Archive, Yefimov, V A, ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA,...
The principal considerations in the design of fiber-optic transmitters for highly phase-stable radio frequency and microwave analog transmission are discussed. Criteria for a fiber-optic transmitter design with improved amplitude and phase-noise performance are developed through consideration of factors affecting the phase noise, including low-frequency laser-bias supply noise, the magnitude and proximity of external reflections into the laser, and temperature excursions of the...
Topics: NASA Technical Reports Server (NTRS), FIBER OPTICS, LASERS, MICROWAVE TRANSMISSION, RADIO...
This report includes the following topics: Submicron Structures Technology and Research, Kinetic Phenomena in Thin Film Electronic Materials, Focused Ion Beam Fabrication, Chemical Reaction Dynamics at Surfaces, Optics and Quantum Electronics, Optical Propagation and Communication, Infrared Nonlinear Optics, Phase Transitions in Chemisorbed Systems, X-Ray Diffuse Scattering, Semiconductor Surface Studies, Ultralow-Temperature Measurements of Submicron Devices Nanometer-Scale Semiconductor...
Topics: DTIC Archive, Allen, Jonathan, MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS,...
Dependability in Electronic Systems
Topics: power, current, voltage, neutron, frequency, data, noise, system, mcu, power supply, power...
An agenda of sessions follows: (1) Optoelectronic Devices; (2) Beam Propagation Techniques; (3) Passive Waveguides and Devices; (4) Optoelectronic Modeling; (5) Automation of Optoelectronics Packaging; (6) Time Domain Simulations; (7) Semiconductor Lasers and Amplifiers; (8) Waveguide Modeling Techniques; (9) Rare Earth Doped Materials and Waveguides; (10) Modeling of Waveguide Devices; (11) Robust, Stable, and Manufacturable Optoelectronic Technology; (12) Optoelectronic Modeling; (13)...
Topics: DTIC Archive, Hennege, David W., OPTICAL SOCIETY OF AMERICA WASHINGTON DC, *ELECTROOPTICS,...
Developement of computer architecture is discussed in terms of the proliferation of the microprocessor, the utility of the medium-scale computer, and the sheer computational power of the large-scale machine. Changes in new applications brought about because of ever lowering costs, smaller sizes, and faster switching times are included.
Topics: NASA Technical Reports Server (NTRS), COMPUTER DESIGN, COMPUTER PROGRAMMING, TECHNOLOGY ASSESSMENT,...
Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.
Topics: NASA Technical Reports Server (NTRS), GALLIUM ARSENIDES, INDIUM PHOSPHIDES, OPTICAL COMMUNICATION,...
The topics of this volume include: (1) pulsed power technology, (2) linear and non-linear orbit theory, (3) transverse and longitudinal instabilities and cures, (4) beam-beam interaction, (5) beam cooling, (6) high current dynamics, (7) particle sources, (8) RF guns and LINAC injectors, and (9) beam diagnostics instrumentation.
Topics: DTIC Archive, Luccio, A, LASERS AND ELECTRO-OPTICS SOCIETY (IEEE) PISCATAWAY NJ, *ION ACCELERATORS,...
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Dec 28, 2018
12/18
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xyz
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This is a book which is not found me on net
Topics: semiconductor devices, electronic devices
The development of a technology for building electrically alterable read only memories (EAROMs) or reprogrammable read only memories (RPROMs) using a single level metal gate p channel MOS process with all conventional processing steps is outlined. Nonvolatile storage of data is achieved by the use of charged floating gate electrodes. The floating gates are charged by avalanche injection of hot electrodes through gate oxide, and discharged by avalanche injection of hot holes through gate oxide....
Topics: NASA Technical Reports Server (NTRS), GATES (CIRCUITS), TECHNOLOGY UTILIZATION, TRAPPING,...
This book contains data on the electrostatic discharge susceptibility (ESD) of electronic devices. Detailed susceptibility data is presented along with the ESD classification in accordance with DOD-HDBK-263 for approximately 700 microcircuits and 500 discrete semiconductor devices. A discussion of various discharge models and failure mechanisms of ESD are also presented.
Topics: DTIC Archive, Denson, William K, RELIABILITY ANALYSIS CENTER GRIFFISS AFB NY, *ELECTRIC DISCHARGES,...
GaN Transferred Electron Devices (TEDs) have been investigated on SiC substrates. SiC thinning and via-hole technology have been developed and applied to GaN TEDs for improved performance. Low-temperature tests have been conducted for better understanding of velocity-field characteristics. Passive micromachined circuitry has been investigated and deep etched vertical wall structures were explored. Micromachined-to-waveguide transitions have been fabricated and a test circuit for a micromachined...
Topics: DTIC Archive, Pavlidis, Dimitris, MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND...
The primary objective of this research and development effort was to develop monolithic microwave integrated circuit (MMIC) packaging which will operate efficiently at millimeter-wave frequencies. The packages incorporated fused silica as the substrate material which was selected due to its favorable electrical properties and potential performance improvement over more conventional materials for Ka-band operation. The first step towards meeting this objective is to develop a package that meets...
Topics: NASA Technical Reports Server (NTRS), APPLICATION SPECIFIC INTEGRATED CIRCUITS, CHIPS...
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1 online resource (xviii, 75 pages) :
Topics: Power semiconductors -- Mathematical models, Insulated gate bipolar transistors -- Mathematical...
A guideline for heavy ion radiation testing for single event upset was prepared to assist new experimenters in preparing and directing tests. How to estimate parts vulnerability and select an irradiation facility is described. A broad brush description of JPL equipment is given, certain necessary pre-test procedures are outlined and the roles and testing guidelines for on-site test personnel are indicated. Detailed descriptions of equipment needed to interface with JPL test crew and equipment...
Topics: NASA Technical Reports Server (NTRS), COSMIC RAYS, HEAVY IONS, RADIATION EFFECTS, RADIATION...
A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux, and energy is presented. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different...
Topics: NASA Technical Reports Server (NTRS), ELECTRON BOMBARDMENT, GROUND STATE, ION BEAMS, ION SOURCES,...
Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed.
Topics: NASA Technical Reports Server (NTRS), FLAT PLATES, GALLIUM ARSENIDES, KINETICS, MATHEMATICAL...
An acoustic surface wave oscillator is constructed from a semiconductor piezoelectric acoustic surface wave amplifier by providing appropriate perturbations at the piezoelectric boundary. The perturbations cause Bragg order reflections that maintain acoustic wave oscillation under certain conditions of gain and feedback.
Topics: NASA Technical Reports Server (NTRS), OSCILLATORS, SURFACE ACOUSTIC WAVE DEVICES, WAVE...
Energy deposition technique deduces neutral-beam flux or dose from measured values of incremental resistance increases in platinum wire passed through beam. Steady-state heat balance analysis led to equivalent neutral-beam current. Method was used to detect neutral-atom content of 60-keV argon ion beam.
Topics: NASA Technical Reports Server (NTRS), ATOM CONCENTRATION, DOSIMETERS, ELECTRON BOMBARDMENT, FLUX...
Defects are limiting the performance of nitride semiconductor devices: they restrict doping levels, lead to device degradation, and interfere with achieving undoped or semi-insulating material. We have performed a comprehensive theoretical study aimed at facilitating the identification of defects and impurities, and at devising strategies for controlling their formation. Calculations were performed for isolated point defects, defect complexes, and impurities, in a bulk environment, as well as...
Topics: DTIC Archive, Walle, Chris G Van de, XEROX PALO ALTO RESEARCH CENTER CA, *POINT DEFECTS, *SOLID...
The introduction of ultrafast technology into space offers novel opportunities. Agile optical phased arrays that allow rapid forming and redirection of high average power beams with little or no mechanical movement are especially interesting. Recent advances in semiconductor and optical fiber lasers suggest lightweight compact optical phased arrays suitable for microspacecraft are feasible. Double clad fiber offers an opportunity to provide average powers of order ten watts in single mode...
Topics: DTIC Archive, Fork, Richard L, ALABAMA UNIV IN HUNTSVILLE DEPT OF ELECTRICAL AND COMPUTER...
In this research project the team studied unique gain and signal processing capabilities of semiconductor optical amplifiers (SOAs). The main areas studied over the 5 years of this award were: 1. Small signal processing using SOAs; 2. Large signal pulse shaping using SOAs; and 3. Optical signal processing and filtering using slow optical waveguides based on electromagnetically induced transparency (EIT). In this PECASE sponsored research they investigated the potential for compound...
Topics: DTIC Archive, Blumenthal, Daniel J, CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER...
Nonpolar nitride semiconductor materials containing a wide range of structural defects are studied. High quality InGaN quantum wells grown on bulk stacking fault (SF) -free GaN substrates show larger PL intensity and shorter PL lifetime with decreasing well width, indicating that the radiative lifetime is becoming smaller as the well narrows, consistent with the theoretically predicted increase in oscillator strength and associated exciton binding energy. Moreover, the fact that these phenomena...
Topics: DTIC Archive, ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE, *EXCITONS,...
Topics covered -- Material growth and characterization, including Nitrides. High speed semiconductor devices - opto-electronic devices; Device technology, characterization, modeling, simulation small/large signal and noise properties; High speed and microwave integrated circuits; Technology, design and characterization; Optoelectronic devices and their integration; Nano devices/quantum structures and devices; Novel device concepts; Terahertz technology noise - nonlinear properties - reliability.
Topics: DTIC Archive, EIDGENOESSISCHE TECHNISCHE HOCHSCHULE ZURICH (SWITZERLAND), *INTEGRATED CIRCUITS,...
Topics: DTIC Archive, Dabrowski,Piotr, FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO, *ELECTROOPTICS,...
Parallel algorithms and fully functional application codes for 2D and 3D device analysis of semiconductor devices have been demonstrated. Advanced modeling based on a hydrodynamic formulation (HD) of the semiconductor transport equations and using a Galerkin Least Squares Finite Element Method (GLS-FEM) has demonstrated nearly ideal parallel performance for 2D MOS and Bipolar transistor applications across Intel and IBM machines. Parallelization of conventional drift-diffusion (DD) based device...
Topics: DTIC Archive, Dutton, R. W., STANFORD UNIV CA, *COMPUTERIZED SIMULATION, *FINITE ELEMENT ANALYSIS,...
The current conduction mechanisms of 4H-SiC p+n mesa diodes were studied using current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T), deep level transient spectroscopy (DLTS), optical observations, and reverse breakdown measurements. Temperature and voltage dependencies of diffusion, recombination, and tunneling current processes are shown to be consistent with Sah-Noyce-Shockley theory. Recombination currents having an ideality factor of A=1.85-2.1 yielded an activation...
Topics: DTIC Archive, Dunn, Michael E, AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH, *ELECTRICAL...
This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of...
Topics: DTIC Archive, DiMaria, D J, IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY, *ELECTRICAL...
Evaporated tungsten interface dopant, oxide-nitride interface and nitride bulk traps in MNOS structures were examined using charge centroid and thermally stimulated current (TSC) techniques. Trapping in dopant traps occurred at low injected charge levels. Above a 'saturation' level trapping occurred in the nitride, and the charge centroid penetrated into the nitride. TSC measurements were made on MNS, MNOS, and interface doped MNOS devices. Analysis of TSC spectra yielded trap depths for the...
Topics: DTIC Archive, Sutton, William Gardner, AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF...
Evaporated tungsten interface dopant, oxide-nitride interface and nitride bulk traps in MNOS structures were examined using charge centroid and thermally stimulated current (TSC) techniques. Trapping in dopant traps occurred at low injected charge levels. Above a 'saturation' level trapping occurred in the nitride, and the charge centroid penetrated into the nitride. TSC measurements were made on MNS, MNOS, and interface doped MNOS devices. Analysis of TSC spectra yielded trap depths for the...
Topics: DTIC Archive, Sutton, William Gardner, AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF...
Key to future diamond semiconductor development are ohmic and Schottky contacts that are stable at high temperature. Wide bandgap materials such as diamond (5.5 eV), pose special problems and demand ingenious solutions. Prior to our work, recent research into stable ohmic and Schottky contacts had been primarily limited to e-beam evaporation of carbide forming metals such as Ti, Ta, and Mo. These approaches have been relatively successful at decreasing the specific contact resistivity to as low...
Topics: DTIC Archive, Tan, Soo-Hee, ADVANCED TECHNOLOGY MATERIALS INC DANBURY CT, *DIAMONDS,...
A new energy transport model including both carrier and lattice temperatures has been developed and implemented in PISCES 2Er. Major capabilities in physical models for compound semiconductor devices include: heterojunction interfaces, deep level trapping and new mobility models. Applications of PISCES 2Er in the modeling of GaAs MESFET sidegating and electronic effects in light-emitting structures have been achieved. The GaAs MESFET modeling of dc and ac effects have been confirmed...
Topics: DTIC Archive, Dutton, Robert W., STANFORD UNIV CA, *COMPUTERIZED SIMULATION, *ELECTROOPTICS,...
The gate length of GaAs MESFETs is required to be shorter for higher microwave frequency applications. The side-wall process using silicon nitride is one of the effective processes to fabricate short gate length GaAs MESFETs. The side-wall process consists of deposition and anisotropic etching of silicon nitride and delivers plasma induced damages on the channel layers of the devices. In this study, the effects of plasma induced damage on the channel layers of ion implanted GaAs MESFETs during...
Topics: DTIC Archive, Ahn, Hokyun, Ji, Honggu, Mun, Jaekyoung, Park, Min, Kim, Haecheon, ELECTRONICS AND...
The use of refractory materials (metals, silicides and composites) in VLSI circuits is reviewed. Material consideration, including deposition techniques, film structure, electrical and mechanical properties, are covered. Gate structures implemented with a variety of refractory materials are described. Semiconductor device processes incorporating these materials--plasma etching, ion implantation, oxidation--are discussed from the perspective of VLSI compatibility. Characteristics of MOS devices...
Topics: DTIC Archive, Steckl,A J, RENSSELAER POLYTECHNIC INST TROY NY CENTER FOR INTEGRATED ELECTRONICS,...
In the last six months that we had this contract we have been able to initiate all phases of the proposed work, making substantial progress on a number of research areas covering the many different aspects of the contract. In particular, we have written nine papers (six of which have already been published or accepted for publication) and have submitted seven abstracts to conferences. We have done enough work for several more publications and these papers are in preparation. We also plan to...
Topics: DTIC Archive, Sarma,S D, MARYLAND UNIV COLLEGE PARK DEPT OF PHYSICS AND ASTRONOMY, *SEMICONDUCTOR...
The final report describes the technical tasks and accomplishments during the contractual period from April 25, 1983 to April 24, 1986. Research findings in four scientific areas, (a) MBE growth, (b) heterojunction properties, (c) superlattice and quantum well structural devices, and Si on insulator by MBE are summarized. Details of these results are referred to the journal publications attached. In addition to scientific publications, the results of this research also help industrial...
Topics: DTIC Archive, Wang,Kang L, CALIFORNIA UNIV LOS ANGELES, *HETEROJUNCTIONS, *EPITAXIAL GROWTH,...
The Center for Occupational Research and Development (CORD) carried out four activities to foster semiconductor manufacturing technician (SMT) training: (1) collaboration with industry experts and educators while developing a curriculum to train SMTs; (2) implementation and testing of the curriculum at a technical college; (3) dissemination of information to postsecondary schools, community, and technical colleges; and (4) creation of a model for the development of technician training programs...
Topics: ERIC Archive, Cost Effectiveness, Curriculum Development, Electronic Technicians, Electronics...
The economic impact of NASA programs on weather forecasting and the computer and semiconductor industries is discussed. Contributions to the advancement of the science of astronomy are also considered.
Topics: NASA Technical Reports Server (NTRS), ECONOMIC ANALYSIS, NASA PROGRAMS, ASTRONOMY, COMPUTERS,...
The history of the development of a transmit module for the band 17.7 to 20.2 GHz is presented. The module was to monolithically combine, on one chip, five bits of phase shift, a buffer amplifier and a power amplifier to produce 200 mW to the antenna element. The approach taken was MESFET ion implanted device technology. A common pinch-off voltage was decided upon for each application. The beginning of the total integration phases revealed hitherto unencountered hazards of large microwave...
Topics: NASA Technical Reports Server (NTRS), ANTENNA FEEDS, CHIPS (ELECTRONICS), ELECTROMAGNETIC WAVE...
