In this paper the state of art of semiconductors devices for Industrial
Pulse-Width Modulation (PWM) Inverters is presented. The last generations of
Insulated Gate Bipolar Transistors (IGBTs), Silicon Carbide (SiC) MOSFETs and
Gallium Nitride (GaN) Transistors are introduced and analysed. At last a
comparison between Si-based IGBT and SiC MOSFET, obtained by SPICE simulations,
is presented in order to identify the device which makes the PWM inverter more
efficient.